MEM86-E128K 3100ME2/B 用于数据存储模块

MEM86-E128K 3100ME2/B 用于数据存储模块 

7.5电气特性
VS+=5 V，VS–=0 V，G=7 V/V，RF=453Ω，输入共模偏置在中间电源，RL=200Ω，参考输出负载
供应中期，TA=25℃（除非另有说明）
参数测试条件小典型大单元测试
级别（1）
交流性能
SSBW小信号带宽VOUT=100 mVPP 1.2 GHz C
LSBW大信号带宽VOUT=2 VPP 600 MHz C
GBWP增益带宽积5.5GHz C
0.1-dB平坦度的带宽130 MHz C
SR转换率（10%-90%）VOUT=2-V阶跃2000 V/µs C
tr上升时间VOUT=100 mV阶跃0.3 ns C
tf下降时间VOUT=100 mV阶跃0.3 ns C
0.1%VOUT=2-V阶跃8 ns C的稳定时间
0.001%VOUT=2-V阶跃3000 ns C的稳定时间
过冲或欠冲VOUT=2-V阶跃7%C
过驱动恢复2倍输出过驱动（0.1%恢复）200纳秒C
HD2二阶谐波失真
f=10 MHz，VOUT=2 VPP 88
dBc C
f=100 MHz，VOUT=2 VPP 64
HD3三阶谐波失真
f=10 MHz，VOUT=2 VPP 86
dBc C
f=100 MHz，VOUT=2 VPP 68
en输入参考电压噪声f=1 MHz 2.5 nV/√赫兹
ZOUT闭环输出阻抗f=1 MHz 0.15ΩC
直流性能
AOL开环电压增益72.75 dB A
VOS输入偏移电压TA=25°C–5±0.8 5 mV A
ΔVOS/ΔT输入偏移电压漂移TA=-40°C至+125°C±2µV/°C B
IBN，IBI输入偏置电流TA=25°C±0.4 5 pA A
IBOS输入偏移电流TA=25°C±0.01 5 pA A
共模抑制比VCM=±0.5 V，参考
中等功率70-90 dB A
投入
共模输入电阻1 GΩC
CCM共模输入电容0.62 pF C
差分输入电阻1 GΩC
CDIFF差分输入电容0.2 pF C
VIH共模输入范围（高）共模抑制比>66 dB，VS+=3.3 V 1.7 1.9 V A
VIL共模输入范围（低）共模抑制比>66 dB，VS+=3.3 V 0 0.4 V A
VIH共模输入范围（高）
共模抑制比>66 dB 3.4 3.6
五、
A.
TA=–40°C至+125°C，共模抑制比>66
数据库
3.4 B
VIL共模输入范围（低）
共模抑制比>66 dB 0 0.4
五、
A.
TA=–40°C至+125°C，共模抑制比>66
dB 0.35B
输出
VOH输出电压（高）TA=25°C，VS+=3.3 V 2.3 2.4 V A
VOH输出电压（高）
TA=25°C 3.95 4.1
五、
A.
TA=–40°C至+125°C 3.9 B
VOL输出电压（低）TA=25°C，VS+=3.3 V 1.05 1.15 V A
6.
OPA858
SBOS629A–2018年4月–2018年7月修订www.ti.com
产品文件夹链接：OPA858
提交文件反馈版权©2018，德克萨斯仪器公司
电气特性（续）
VS+=5 V，VS–=0 V，G=7 V/V，RF=453Ω，输入共模偏置在中间电源，RL=200Ω，参考输出负载
供应中期，TA=25℃（除非另有说明）
参数测试条件小典型大单元测试
级别（1）
VOL输出电压（低）
TA=25°C 1.05 1.15
五、
A.
TA=-40°C至+125°C 1.2 B
线性输出驱动器（接收器和
（来源）
RL=10Ω，AOL>60 dB 65 80
妈妈
A.
TA=-40°C至+125°C，RL=10Ω，
AOL＞60 dB
64 B
ISC输出短路电流85 105 mA A
电源
VS工作电压3.3 5.25 V A
IQ静态电流VS+=5 V 18 20.5 24 mA A
IQ静态电流VS+=3.3 V 17.5 20 23.5 mA A
IQ静态电流VS+=5.25 V 18 21 24 mA A
IQ静态电流TA=125°C 24.5 mA B
IQ静态电流TA=–40°C 18.5 mA B
电源抑制比+正电源抑制
74比84
分贝A
PSRR——
负电源抑制
70比80
断电
在此电压0.65 1 V A以下禁用电压阈值放大器关闭
在高于此电压1.5 1.8 V A时启用电压阈值放大器
断电静态电流70 140µA A
局部放电偏置电流70 200µA A
接通时间延迟至VOUT的时间=终值的90%，13纳秒C
截止时间延迟120纳秒C

MEM86-E128K 3100ME2/B 用于数据存储模块 

MEM86-E128K 3100ME2/B 用于数据存储模块 
7.5 Electrical Characteristics
VS+ = 5 V, VS– = 0 V, G = 7 V/V, RF = 453 Ω, input common-mode biased at midsupply, RL = 200 Ω, output load is referenced
to midsupply, and TA = 25℃ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TEST
LEVEL(1)
AC PERFORMANCE
SSBW Small-signal bandwidth VOUT = 100 mVPP 1.2 GHz C
LSBW Large-signal bandwidth VOUT = 2 VPP 600 MHz C
GBWP Gain-bandwidth product 5.5 GHz C
Bandwidth for 0.1-dB flatness 130 MHz C
SR Slew rate (10% - 90%) VOUT = 2-V step 2000 V/µs C
tr Rise time VOUT = 100-mV step 0.3 ns C
tf Fall time VOUT = 100-mV step 0.3 ns C
Settling time to 0.1% VOUT = 2-V step 8 ns C
Settling time to 0.001% VOUT = 2-V step 3000 ns C
Overshoot or undershoot VOUT = 2-V step 7% C
Overdrive recovery 2x output overdrive (0.1% recovery) 200 ns C
HD2 Second-order harmonic distortion
f = 10 MHz, VOUT = 2 VPP 88
dBc C
f = 100 MHz, VOUT = 2 VPP 64
HD3 Third-order harmonic distortion
f = 10 MHz, VOUT = 2 VPP 86
dBc C
f = 100 MHz, VOUT = 2 VPP 68
en Input-referred voltage noise f = 1 MHz 2.5 nV/√Hz C
ZOUT Closed-loop output impedance f = 1 MHz 0.15 Ω C
DC PERFORMANCE
AOL Open-loop voltage gain 72 75 dB A
VOS Input offset voltage TA = 25°C –5 ±0.8 5 mV A
ΔVOS/ΔT Input offset voltage drift TA = –40°C to +125°C ±2 µV/°C B
IBN, IBI Input bias current TA = 25°C ±0.4 5 pA A
IBOS Input offset current TA = 25°C ±0.01 5 pA A
CMRR Common-mode rejection ratio VCM = ±0.5 V, referenced to
midsupply 70 90 dB A
INPUT
Common-mode input resistance 1 GΩ C
CCM Common-mode input capacitance 0.62 pF C
Differential input resistance 1 GΩ C
CDIFF Differential input capacitance 0.2 pF C
VIH Common-mode input range (high) CMRR > 66 dB, VS+ = 3.3 V 1.7 1.9 V A
VIL Common-mode input range (low) CMRR > 66 dB, VS+ = 3.3 V 0 0.4 V A
VIH Common-mode input range (high)
CMRR > 66 dB 3.4 3.6
V
A
TA = –40°C to +125°C, CMRR > 66
dB
3.4 B
VIL Common-mode input range (low)
CMRR > 66 dB 0 0.4
V
A
TA = –40°C to +125°C, CMRR > 66
dB 0.35 B
OUTPUT
VOH Output voltage (high) TA = 25°C, VS+ = 3.3 V 2.3 2.4 V A
VOH Output voltage (high)
TA = 25°C 3.95 4.1
V
A
TA = –40°C to +125°C 3.9 B
VOL Output voltage (low) TA = 25°C, VS+ = 3.3 V 1.05 1.15 V A
6
OPA858
SBOS629A –APRIL 2018–REVISED JULY 2018 www.ti.com
Product Folder Links: OPA858
Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated
Electrical Characteristics (continued)
VS+ = 5 V, VS– = 0 V, G = 7 V/V, RF = 453 Ω, input common-mode biased at midsupply, RL = 200 Ω, output load is referenced
to midsupply, and TA = 25℃ (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT TEST
LEVEL(1)
VOL Output voltage (low)
TA = 25°C 1.05 1.15
V
A
TA = –40°C to +125°C 1.2 B
Linear output drive (sink and
source)
RL = 10 Ω, AOL > 60 dB 65 80
mA
A
TA = –40°C to +125°C, RL = 10 Ω,
AOL > 60 dB
64 B
ISC Output short-circuit current 85 105 mA A
POWER SUPPLY
VS Operating voltage 3.3 5.25 V A
IQ Quiescent current VS+ = 5 V 18 20.5 24 mA A
IQ Quiescent current VS+ = 3.3 V 17.5 20 23.5 mA A
IQ Quiescent current VS+ = 5.25 V 18 21 24 mA A
IQ Quiescent current TA = 125°C 24.5 mA B
IQ Quiescent current TA = –40°C 18.5 mA B
PSRR+ Positive power-supply rejection
ratio 74 84
dB A
PSRR–
Negative power-supply rejection
ratio 70 80
POWER DOWN
Disable voltage threshold Amplifier OFF below this voltage 0.65 1 V A
Enable voltage threshold Amplifier ON above this voltage 1.5 1.8 V A
Power-down quiescent current 70 140 µA A
PD bias current 70 200 µA A
Turnon time delay Time to VOUT = 90% of final value 13 ns C
Turnoff time delay 120 ns C